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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 1/4 HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and lowspeed switching applications. Absolute Maximum Ratings (Ta=25C) TO-251 * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ..................................................................................... 25 W * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... 100 V VCEO Collector to Emitter Voltage .................................................................................... 100 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current .............................................................................................................. 4 A Characteristics (Ta=25C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *VBE(sat) *hFE1 *hFE2 *hFE3 Cob Min. 100 100 500 1 200 Typ. Max. 10 20 2 2 3 2.8 4 12 100 Unit V V uA uA mA V V V V K pF Test Conditions IC=1mA IC=30mA VCB=80V VCE=50V VEB=5V IC=2A, IB=8mA IC=4A, IB=40mA IC=2A, VCE=4V IC=4A, IB=80mA IC=0.5A, VCE=3V IC=2A, VCE=3V IC=4A, VCE=3V VCB=10V *Pulse Test: Pulse Width 380us, Duty Cycle2% HI112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 10000 125 C 1000 75 C o o Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 2/4 Current Gain & Collector Current 10000 125 C 1000 75 C o o hFE hFE 100 25 C 10 hFE @ VCE=4V 1 1 10 100 1000 10000 o 100 25 C 10 o hFE @ VCE=3V 1 1 10 100 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 25 C 75 C 125 C o o o Saturation Voltage (mV) 1000 25 C o 125 C o 75 C o VCE(sat) @ IC=100IB 100 100 100 100 VCE(sat) @ IC=250IB 1000 10000 1000 10000 Collector Current IC (mA) Collector Current IC (mA) Saturation Voltage & Collector Current 10000 10000 ON Voltage & Collcetor Current Saturation Voltage (mV) 25 C 1000 o ON Voltage (mV) 25 C 1000 125 C o o 125 C o 75 C o 75 C o VBE(sat) @ IC=250IB VBE(ON) @ VCE=4V 100 100 100 100 1000 10000 1000 10000 Collector Current IC (mA) Collector Current IC (mA) HI112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 3/4 ON Voltage & Collcetor Current 10000 Switching Time & Collector Current 10 VCC=30V, IC=250IB1= -250IB2 25 C 1000 125 C o o Switching Times (us). . Tstg ON Voltage (mV) 75 C o 1 Tf Ton VBE(ON) @ VCE=3V 100 100 0.1 1000 10000 1 10 Collector Current IC (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 Safe Operating Area 100000 PT=1ms PT=100ms 10000 Collector Current-IC (mA) PT=1s 1000 Capacitance (pF) 100 100 Cob 10 10 0.1 1 10 100 1 1 10 100 Reverse-Biased Voltage (V) Forward Voltage-VCE (V) HI112 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking: Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No. : 4/4 A B C D H 112 Date Code I Control Code F 3 I E K 2 1 G Style: Pin 1.Base 2.Collector 3.Emitter H J 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HI112 HSMC Product Specification |
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